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PHT4NQ10LT
N-channel enhancement mode field-effect transistor
M3D087
Rev. 01 -- 11 September 2000
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: PHT4NQ10LT in SOT223.
2. Features
s s s s s TrenchMOSTM technology Fast switching Low on-state resistance Surface mount package Logic level compatible.
3. Applications
c c
s Primary side switch in DC to DC convertors s High speed driver s Fast general purpose switch.
4. Pinning information
Table 1: Pin 1 2 3 4 Pinning - SOT223, simplified outline and symbol Description gate (g)
4
Simplified outline
Symbol
drain (d) source (s) drain (d)
1
Top view
d
g
2 3
MSB002 - 1
MBB076
s
SOT223
1.
TrenchMOS is a trademark of Royal Philips Electronics
Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 C Tsp = 25 C; VGS = 5 V Tsp = 25 C VGS = 5 V; ID = 1.75 A Typ - - - - 200 Max 100 3.5 6.9 150 250 Unit V A W C m drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM EAS drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) Tsp = 25 C peak source (diode forward) current Tsp = 25 C; tp 10 s non-repetitive avalanche energy unclamped inductive load; ID = 3.5 A; tp = 0.2 ms; VDD 15 V; RGS = 50 ; VGS = 5 V; starting Tj = 25 C; Figure 4 unclamped inductive load; VDD 15 V; RGS = 50 ; VGS = 5 V; Figure 4 Tsp = 25 C; VGS = 5 V; Figure 2 and 3 Tsp = 100 C; VGS = 5 V; Tsp = 25 C; pulsed; tp 10 s; Figure 3 Tsp = 25 C; Figure 1 Conditions Tj = 25 to 150 C Tj = 25 to 150 C; RGS = 20 k Min - - - - - - - -65 -65 - - - Max 100 100 16 3.5 2.2 14 6.9 +150 +150 3.5 14 45 Unit V V V A A A W C C A A mJ
Source-drain diode
Avalanche ruggedness
IAS
non-repetitive avalanche current
-
3.5
A
9397 750 07342
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 11 September 2000
2 of 13
Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode field-effect transistor
03aa17
120
P der (%) 100
03aa25
120
Ider (%) 100
80
80
60
60
40
40
20
20
0 0 25 50 75 100 125
Tsp
0
150 (oC)
175
0
25
50
75
100
125
150 175 Tsp (oC)
P tot P der = ---------------------- x 100% P
tot ( 25 C )
VGS 5 V ID I der = ------------------ x 100% I
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of solder point temperature.
102 ID (A) 10 RDSon = VDS/ ID tp = 10 s
03ac48
Fig 2. Normalized continuous drain current as a function of solder point temperature.
10 IAS (A) 25C
03ac92
100 s 1 D.C. 10-1
P
1 ms 10 ms 100 ms
1
=
tp T
Tj prior to avalanche = 125C 10-1 10-2
tp
t T
10-2 1
10
102
VDS
103
10-1
1
tp (ms)
10
Tsp = 25 C; IDM is single pulse
Unclamped inductive load; VDD 15 V; RGS = 50 ; VGS = 5 V; starting Tj = 25 C and 125 C.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
Fig 4. Non-repetitive avalanche ruggedness current as a function of pulse duration.
9397 750 07342
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 11 September 2000
3 of 13
Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Rth(j-sp) Rth(j-a) Thermal characteristics Conditions mounted on a printed-circuit board; minimum footprint Value Unit 18 150 K/W K/W thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 5 thermal resistance from junction to ambient Symbol Parameter
7.1 Transient thermal impedance
03ac84
102 Zth(j-sp) (K/W) 10
= 0.5
0.2 0.1
1
0.05 0.02
P
10-1 single pulse
=
tp T
tp T
t
10-2 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10
Tsp = 25 C
Fig 5. Transient thermal impedance from junction to solder point as a function of pulse duration.
9397 750 07342
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 11 September 2000
4 of 13
Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 A; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 10 Tj = 25 C Tj = 150 C Tj = -55 C IDSS drain-source leakage current VDS = 100 V; VGS = 0 V Tj = 25 C Tj = 150 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 10 V; VDS = 0 V VGS = 5 V; ID = 1.75 A; Figure 8 and 9 Tj = 25 C Tj = 150 C Dynamic characteristics gfs Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr forward transconductance total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time turn-on rise time turn-off delay time turn-off fall time source-drain (diode forward) voltage IS = 3.5 A; VGS = 0 V; Figure 14 reverse recovery time recovered charge IS = 3.5 A; dIS/dt = -100 A/s; VGS = 0 V; VDS = 30 V VDD = 50 V; RD = 15 ; VGS = 5 V; RG = 6 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 13 VDS = 5 V; ID = 3.5 A; Figure 12 ID = 3.5 A; VDS = 80 V; VGS = 5 V; Figure 15 - - - - - - - - - - - - - - 8.5 12.2 1.1 3.6 374 45 24 4 10 52 21 0.87 50 100 - - - - - - - - - - - 1.5 - - S nC nC nC pF pF pF ns ns ns ns V ns nC - - 200 - 250 575 m m - - - 1 4 10 25 250 100 A A nA 1 0.6 - - - - 2 - 2.3 V V V 100 89 130 - - - V V Conditions Min Typ Max Unit
Source-drain diode
9397 750 07342
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 11 September 2000
5 of 13
Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode field-effect transistor
ID 9 (A) 8 7 6 5 4 3 2 1 0
10
03ac85
Tj = 25C VGS = 5V 3V 2.8V 2.6V 2.4V 2.2V 2V 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VDS (V)
ID 9 (A) 8 7 6 5 4 3 2 1 0
10
03ac87
VDS > ID X RDSon
150C
Tj = 25C
0
0.5
1
1.5
2
2.5
3
3.5 4 VGS (V)
Tj = 25 C
Tj = 25 C and 150 C; VDS > ID x RDSon
Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values.
1
03ac86
Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
03aa29
RDSon 0.9 () 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0
2V 2.2V 2.4V
Tj = 25C
2.6V 2.8V 3V
VGS = 5V
3 a 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 -20 20 60 100 140 180 Tj (oC)
1
2
3
4
5
6
7
8
9 10 ID (A)
Tj = 25 C
R DSon a = --------------------------R
DSon ( 25 C )
Fig 8. Drain-source on-state resistance as a function of drain current; typical values.
Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature.
9397 750 07342
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 11 September 2000
6 of 13
Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode field-effect transistor
2.5
V GS(th) (V) max
03aa33
10-1
ID (A) 10-2
03aa36
2
typ
1.5
min
10-3
min
typ
max
1
10-4
0.5
10-5
0 -60 -20 20 60 100 140 180 Tj (oC)
10-6
0 0.5 1 1.5 2 2.5
VGS (V)
3
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = 5 V
Fig 10. Gate-source threshold voltage as a function of junction temperature.
13 gfs 12 (S) 11 10 9 8 7 6 5 4 3 2 1 0
03ac88
Fig 11. Sub-threshold drain current as a function of gate-source voltage.
103
Ciss, Coss, Crss (pF) Ciss
03ac90
VDS > ID X RDSon
Tj = 25C
150C
102
Coss
Crss
0
1
2
3
4
5
6
7
8
9 10 ID (A)
10
10-1
1
10 VDS (V)
102
Tj = 25 C and 150 C; VDS > ID x RDSon
VGS = 0 V; f = 1 MHz
Fig 12. Forward transconductance as a function of drain current; typical values.
Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 07342
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 11 September 2000
7 of 13
Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode field-effect transistor
IS 9 (A) 8 7 6 5 4 3 2 1 0
10
03ac89
03ac91
VGS = 0 V
10 VGS (V) ID = 3.5 A 9 8 7 6 5 VDS = 20 V VDS= 80 V Tj = 25 C
150C
Tj = 25C
4 3 2 1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 VSD (V)
0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 QG (nC)
Tj = 25 C and 150 C; VGS = 0 V
ID = 3.5 A; VDS = 80 V
Fig 14. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
Fig 15. Gate-source voltage as a function of gate charge; typical values.
9397 750 07342
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 11 September 2000
8 of 13
Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode field-effect transistor
9. Package outline
Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
D
B
E
A
X
c y HE b1 vMA
4
Q A A1
1
e1 e
2
bp
3
wM B detail X
Lp
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT223
REFERENCES IEC JEDEC EIAJ SC-73
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
Fig 16. SOT223.
9397 750 07342 (c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 11 September 2000
9 of 13
Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6: 01 Revision history CPCN Description Product specification; initial version
Rev Date 20000911
9397 750 07342
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 11 September 2000
10 of 13
Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode field-effect transistor
11. Data sheet status
Datasheet status Objective specification Preliminary specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Product specification
Production
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
13. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
9397 750 07342
(c) Philips Electronics N.V. 2000 All rights reserved.
Product specification
Rev. 01 -- 11 September 2000
11 of 13
Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode field-effect transistor
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Internet: http://www.semiconductors.philips.com
(SCA70)
9397 750 07342
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 11 September 2000
12 of 13
Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode field-effect transistor
Contents
1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
(c) Philips Electronics N.V. 2000.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 11 September 2000 Document order number: 9397 750 07342

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